2N5551ZL1

Overview

The onsemi 2N5551ZL1 is an NPN silicon epitaxial planar transistor designed for general-purpose high-voltage amplifier applications and gas discharge display drivers. It operates within a collector-emitter voltage of 160 V and supports continuous collector currents up to 600 mA. The device features a maximum power dissipation of 625 mW and a transition frequency of 100 MHz at IC = 10 mA, VCE = 10 V. It functions reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Designed for general-purpose high-voltage amplifiers
• Suitable for gas discharge display drivers
• RoHS compliant with lead-free and halogen-free packaging

Applications

• General-purpose high-voltage amplifiers
• Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the official onsemi datasheet to confirm package type and shipping configuration. Confirm current availability status as some variants are discontinued. Ensure compliance with environmental standards such as RoHS and Halogen-Free requirements specified in the documentation before procurement.

Selection Notes

Select this component when designing circuits requiring high-voltage NPN amplification or driver capabilities. Consider the thermal resistance characteristics and derating requirements above 25°C. Verify that the required DC current gain falls within the standard ranges provided in the electrical characteristics table for your specific operating conditions.

Part Context

This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It is commonly used in discrete semiconductor products for amplification tasks. The device utilizes silicon epitaxial planar technology housed in a TO-92-3 package variant.

Replacement Considerations

Consult the official onsemi datasheet for discontinued part numbers and authorized substitutes. Cross-reference with other manufacturers' general-purpose high-voltage NPN transistors only if electrical parameters match exactly.