2N5552

Overview

The Microchip Technology 2N5552 is a silicon NPN high-power transistor designed for robust performance in demanding environments. It features a maximum collector current of 10 A and a total power dissipation of 15 W. The device supports a minimum DC current gain (hFE) of 40 and operates within an extended temperature range from -65°C to +175°C. Qualified per MIL-PRF-19500/456, it utilizes a TO-3 metal can package suitable for through-hole mounting.

Feature Summary

• High power capability with 10 A collector current and 15 W dissipation
• Military qualification compliant with MIL-PRF-19500/456 standards
• Extended thermal stability operating up to 175°C junction temperature

Applications

• High-power switching circuits
• Industrial control systems
• Automotive electronics requiring rugged reliability

Procurement Notes

Verify the specific revision level against the latest manufacturer datasheet before integration. Confirm that the TO-3 package dimensions match your PCB or chassis layout requirements. Ensure thermal management solutions are adequate for the 15 W power dissipation rating under expected load conditions.

Selection Notes

Select this component when high current handling and military-grade reliability are required. The TO-3 package offers superior heat dissipation compared to smaller surface-mount alternatives. Consider the 175°C operating limit for high-temperature industrial applications where standard commercial parts may fail.

Part Context

This part belongs to Microchip's portfolio of qualified discrete semiconductors. It serves as a high-reliability alternative to commercial transistors in critical infrastructure and defense applications. The TO-3 metal case provides mechanical durability and efficient thermal transfer for high-power scenarios.

Replacement Considerations

Consult official substitution lists for equivalent MIL-PRF-19500/456 qualified devices. Verify pinout compatibility and thermal resistance characteristics when considering cross-brand replacements.