2N5597

$31.70

Description：TRANS PNP 60V 2A TO66
Series：-

SKU:bbe1f51314ca Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 2A TO66
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：20 W
Frequency - Transition：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Supplier Device Package：TO-66 (TO-213AA)

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2N5597

Overview

The 2N5597 is a Silicon PNP power transistor manufactured by Microchip Technology. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 60 V. The device has a maximum power dissipation rating of 20 W and operates at temperatures up to 175 °C. It utilizes a through-hole mounting type in a TO-66 metal package. The minimum DC current gain (hFE) is specified as 70.

Feature Summary

Hermetically sealed TO-66 metal package construction
High-speed switching and power amplification capabilities
Silicon PNP bipolar transistor design

Applications

Audio power amplifier circuits
High frequency power amplifier applications
Voltage regulation systems

Procurement Notes

Verify the manufacturer marking on the component body to confirm Microchip Technology origin, as legacy equivalents exist from other vendors. Ensure the TO-66 metal package dimensions match the target PCB footprint requirements. Check for specific lot traceability documentation if required for aerospace or military specifications. Confirm that the hermetic seal integrity meets project standards before integration into sensitive environments.

Selection Notes

Select this component when high reliability and thermal stability are critical due to its hermetically sealed metal case. The 2 A current capacity and 20 W power rating suit moderate power handling needs. Consider the PNP configuration for complementary circuit designs. The TO-66 package offers superior heat dissipation compared to plastic alternatives, supporting operation at elevated junction temperatures up to 175 °C.

Part Context

This part belongs to the family of single bipolar transistors designed for robust performance. It serves as a discrete solution for power control tasks where traditional plastic packages may lack sufficient thermal or environmental protection. The TO-66 form factor is standard for high-reliability industrial and military electronics requiring long-term stability.