2N5611

2N5611

$31.70
  • Description:TRANS PNP 100V 5A TO66
  • Series:-

SKU:2c73e2d8bdb7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 100V 5A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:25 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N5611

Overview

The Microchip Technology 2N5611 is a unidirectional transient voltage suppression (TVS) diode designed for electrostatic discharge (ESD) protection. It features an axial leaded through-hole package suitable for robust circuit integration. Key electrical specifications include a working voltage of 40.3 V and a breakdown voltage of 43.7 V. The device handles a peak pulse current of 136 A with a clamping voltage of 63.5 V under standard test conditions. It dissipates a peak pulse power of 1.5 kW and has a continuous power dissipation rating of 3 W. The component operates reliably within a temperature range from -55°C to +175°C.

Feature Summary

  • Provides effective protection against high-energy transient voltage events and electrostatic discharge in sensitive electronic circuits.
  • Utilizes a unidirectional configuration to safeguard specific polarity signal lines or power rails from reverse voltage spikes.
  • Engineered with a rugged axial through-hole construction to withstand mechanical stress and high thermal loads during operation.

Applications

  • Protection of input/output interfaces in industrial control systems against ESD events.
  • Surge suppression in communication equipment signal lines exposed to environmental transients.
  • Clamping voltage spikes in automotive electronic modules requiring high-temperature reliability.

Procurement Notes

Verify the specific manufacturing lot and date code upon receipt to ensure compliance with project timelines, as production cycles may vary. Confirm that the axial lead form factor matches the printed circuit board layout requirements. Check for any recent Product Change Notifications regarding material composition or packaging updates to maintain supply chain consistency and regulatory adherence throughout the product lifecycle.

Selection Notes

Select this component when designing circuits requiring robust unidirectional TVS protection with high surge capability. Ensure the operating voltage remains below the 40.3 V working threshold to prevent unintended conduction. Verify that the PCB trace width can handle the 3 W continuous power dissipation without excessive heating. Consider the axial package constraints during mechanical assembly planning to ensure adequate clearance for heat dissipation and physical stability.

Part Context

This device belongs to Microchip's discrete semiconductor lineup focused on protection components. It serves as a specialized solution for managing transient energy in harsh environments. The axial package distinguishes it from surface-mount alternatives, offering higher mechanical strength. It complements other TVS diodes in the portfolio by providing specific voltage ratings and high-current handling capabilities for demanding applications.

Replacement Considerations

Consult official cross-reference documentation for parametrically equivalent unidirectional TVS diodes with matching voltage and current ratings. Verify that any substitute maintains the same axial through-hole package and thermal performance characteristics to ensure seamless integration without redesigning the mounting structure or circuit layout.

2N56112N5611
$31.70
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