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The Microchip Technology 2N5625 is a silicon PNP power transistor designed for high-current applications. It features a collector-emitter breakdown voltage of 80 V and supports a maximum continuous collector current of 10 A. The device delivers a maximum power dissipation of 116 W, making it suitable for robust power management tasks. It operates within a junction temperature range of -65°C to 200°C. Key electrical characteristics include a saturation voltage of 1.5 V at specific base and collector currents. The component utilizes the TO-204AA (TO-3) through-hole package, ensuring reliable thermal performance in demanding electronic circuits.
Verify the manufacturer designation as Microchip Technology or its acquired entities like Actel when sourcing. Confirm the package type matches the required TO-204AA specification. Ensure the datasheet aligns with the 80 V and 10 A ratings. Check for RoHS compliance status if environmental regulations apply. Validate the part number against official distributor catalogs to avoid counterfeit components.
Select this component when an application requires a PNP transistor capable of handling significant current loads. The 80 V breakdown voltage defines the maximum operational limit for collector-emitter circuits. Consider the 116 W power rating for thermal management design. The TO-3 package dictates the physical footprint and mounting requirements on the PCB or chassis.
The 2N5625 belongs to the category of single bipolar transistors, specifically classified as a PNP power device. It is manufactured by Microchip Technology, which integrates various semiconductor brands. This transistor serves as a fundamental building block for analog and digital power electronics, providing amplification and switching functions in high-energy environments.
Consult official Microchip Technology documentation for verified substitute part numbers. Cross-reference specifications such as voltage, current, and package dimensions before substitution. Generic equivalents may not match the exact thermal or electrical performance profiles.