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The Microchip Technology 2N5626 is a silicon NPN power transistor designed for high-current applications. It features an 80 V collector-emitter voltage rating and supports a continuous collector current of 10 A. The device provides a maximum power dissipation of 116 W within the TO-204AA (TO-3) through-hole package. Key electrical characteristics include a transition frequency of 40 MHz, ensuring suitability for low-frequency power switching and amplification tasks.
Verify the specific manufacturer datasheet for absolute maximum ratings and thermal resistance values before integration. Confirm that the TO-3 package mounting requirements align with the target PCB or chassis design. Ensure operating temperatures remain within the specified junction limits to maintain reliability.
Select this component when an NPN transistor with 80 V blocking capability and 10 A current capacity is required. The TO-3 package offers superior heat dissipation compared to smaller surface-mount alternatives. Consider the 40 MHz transition frequency for bandwidth limitations in switching applications.
This part belongs to the family of silicon NPN power transistors commonly used in linear and switching modes. It serves as a robust solution for medium-to-high power applications where thermal management is critical. The TO-3 metal can package provides mechanical durability and effective heat sinking capabilities.
Cross-reference equivalents such as 2SC2681, 2SC2706, 2SC2837, 2SSC2987, 2N3448, 2SC684, and KT819GM based on pinout and electrical specifications.