2N5628

Overview

The 2N5628 is a power NPN silicon bipolar junction transistor manufactured by Microchip Technology. It is designed for high-current applications with a maximum collector current of 10 A and a collector-emitter breakdown voltage of 100 V. The device features a minimum DC current gain (hFE) of 30. It is housed in a TO-3 metal can package with two pins, utilizing a flange mount configuration. The component is leaded and tin-lead terminated, suitable for through-hole installation.

Feature Summary

• High current handling capability up to 10 A
• Robust 100 V collector-emitter voltage rating
• Metal can construction for thermal management

Applications

• Power switching circuits
• Linear regulation stages
• Amplifier output stages

Procurement Notes

Verify the specific manufacturer source, as historical data links this part number to Microsemi, now part of Microchip Technology. Confirm compliance requirements, noting that some records indicate non-RoHS status. Ensure the TO-3 metal package specification matches the mechanical constraints of the target design before procurement.

Selection Notes

Select this component when high current capacity and robust packaging are required. The TO-3 metal case offers superior heat dissipation compared to plastic packages. Consider the 100 V voltage rating and 10 A current limit to ensure operation within safe boundaries for the intended load.

Part Context

This device belongs to the family of power bipolar transistors used in industrial and commercial electronics. It serves as a discrete semiconductor solution for managing significant electrical loads where standard small-signal transistors would fail due to thermal or current limitations.

Replacement Considerations

Check for direct equivalents from other manufacturers offering identical TO-3 pinouts and electrical ratings. Verify that any substitute maintains the same NPN polarity and silicon construction to ensure circuit compatibility.