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Product Detailed Parameters
- Description：TRANS PNP 120V 16A TO204AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：16 A
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：200 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204AA (TO-3)
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Overview
The 2N5630 is a silicon NPN power bipolar junction transistor (BJT) designed for high-voltage and high-power applications. It features a maximum collector-emitter voltage of 120V and a continuous collector current rating of 16A. The device is housed in a TO-3 metal package, providing robust thermal dissipation capabilities suitable for demanding environments. With a transition frequency of 1MHz and a power dissipation capacity of 200W, it supports efficient operation in amplifier and switching circuits.
Feature Summary
- High-power capability with 200W dissipation rating
- Military-grade reliability construction
- Complementary pairing with PNP variants
Applications
- High voltage amplifier circuits
- High power audio amplifier stages
- High voltage switching regulator circuits
Procurement Notes
Verify the manufacturer source carefully, as the 2N5630 is a legacy part number originally defined by Motorola and produced by various vendors including Central Semiconductor and American Microsemiconductor. Confirm that the specific unit received matches the required military or commercial grade specifications and TO-3 package dimensions to ensure compatibility with existing heat sink and mounting infrastructure.
Selection Notes
Select this component when designing circuits requiring high current handling at moderate voltages. Ensure the thermal management system can dissipate up to 200W. Consider the complementary 2N5629 for push-pull configurations. Verify gain bandwidth requirements against the 1MHz transition frequency limit for high-speed signal integrity.
Part Context
The 2N5630 belongs to a family of complementary silicon power transistors, often paired with the 2N5629 (PNP). It serves as a standard solution for linear and switching power applications where ruggedness and high current capacity are prioritized over miniaturization. The TO-3 package remains a common interface for industrial and audio equipment.
Replacement Considerations
Direct substitutes include the 2N6030 and 2N5629 (complementary pair). Cross-reference datasheets from Central Semiconductor or Motorola to ensure pinout and electrical parameter equivalence before substitution.
