2N5632

Overview

The Microchip Technology 2N5632 is a silicon NPN bipolar junction transistor (BJT) designed for high-power applications. It features a maximum collector-emitter voltage rating of 100V and a continuous collector current capacity of 10A. The device is housed in a hermetically sealed TO-3 metal package, providing robust thermal performance and isolation. Key electrical characteristics include a minimum DC current gain (hFE) of 25 to 100 at a collector current of 5A and a maximum collector-emitter saturation voltage of 1.0V at 7.5A. The component supports a maximum power dissipation of 150W and operates with a transition frequency of 1 MHz.

Feature Summary

• Hermetically sealed TO-3 metal package for reliable high-power operation
• Excellent safe operating area characteristics
• High DC current gain with low saturation voltage

Applications

• High-power linear regulation circuits
• Power amplifier stages
• Industrial motor control systems

Procurement Notes

Verify the manufacturer origin carefully, as the 2N5632 designation is used by multiple vendors including Central Semiconductor and ISC. Confirm that the specific unit received matches the required hermetically sealed TO-3 package style if environmental sealing is critical. Ensure the supplier provides official datasheets from the actual manufacturer rather than generic databases to guarantee accurate electrical parameters and pinout definitions.

Selection Notes

Select this component when a rugged, high-current NPN transistor with a metal case is required for thermal management. The 100V rating suits moderate voltage power switching or amplification tasks. Consider the physical size of the TO-3 package for board space constraints. Verify that the required current gain meets the minimum threshold of 25 at the intended operating current level for stable circuit performance.

Part Context

The 2N5632 belongs to the class of single bipolar transistors, specifically power NPN devices. It is historically associated with Microsemi Corporation technology now under Microchip Technology. The part serves as a discrete solution for power handling where integrated circuits may lack sufficient current capacity or thermal robustness. Its legacy status ensures wide availability across various semiconductor distributors.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation. Users should consult specific manufacturer cross-reference guides for equivalent TO-3 NPN power transistors with matching 100V and 10A ratings.