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Product Detailed Parameters
- Description：TRANS NPN 250V 0.5A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk,Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：10V @ 100mA, 500mA
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 100mA, 10mV
- Power - Max：20 W
- Frequency - Transition：10MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5655G is a plastic NPN silicon high-voltage power transistor designed for line-operated equipment. It features a collector-emitter voltage of 250 Vdc and a continuous collector current of 0.5 Adc. The device dissipates up to 20 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 6.25 °C/W. It operates within a junction temperature range of -65 to +150°C. Key electrical characteristics include a DC current gain ranging from 5.0 to 250 and a current-gain bandwidth product of 10 MHz.
Feature Summary
- High-voltage capability suitable for line-operated applications
- Excellent DC current gain across various operating currents
- High current-gain bandwidth product for switching efficiency
- Pb-Free and RoHS compliant packaging
Applications
- Audio output amplifiers
- Low-current, high-voltage converters
- AC line relays
Procurement Notes
Verify the specific datasheet revision (e.g., Rev. 12) matches design requirements. Confirm package style (TO-225 Case 77-09 Style 1) and pinout configuration during integration. Ensure compliance with Pb-Free and RoHS standards if required by project specifications. Validate thermal management strategies against the 6.25 °C/W junction-to-case resistance.
Selection Notes
Select this component for designs requiring high-voltage NPN switching or amplification in line-operated systems. Compare the 250 V rating against circuit peak voltages to ensure adequate margin. Evaluate thermal dissipation needs relative to the 20 W limit and derating curves. Consider the complementary 2N5657G if higher voltage ratings are necessary for the application.
Part Context
This device belongs to the 2N565x series of plastic NPN silicon high-voltage power transistors manufactured by onsemi. It shares the same TO-225 package and general structural characteristics as the 2N5657G, differing primarily in voltage ratings. The series is engineered for robust performance in audio and converter applications.
Replacement Considerations
The 2N5657G is a direct family member with identical packaging but a higher 350 V collector-emitter voltage rating. Verify that the lower voltage rating of the 2N5655G meets the specific circuit requirements before substituting.
