2N5657

$0.31

Description：TRANS NPN 350V 0.5A SOT-32-3
Series：-

SKU:6166cbb4ac12 Category: Single Bipolar Transistors Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 350V 0.5A SOT-32-3
Series：-
Mfr：STMicroelectronics
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：350 V
Vce Saturation (Max) @ Ib, Ic：10V @ 100mA, 500mA
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 100mA, 10V
Power - Max：20 W
Frequency - Transition：10MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：SOT-32-3
Grade：-
Qualification：-

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2N5657

Overview

The 2N5657 is a silicon epitaxial-base NPN transistor manufactured by STMicroelectronics, housed in the SOT-32 (TO-126) plastic package. It features a maximum collector-emitter voltage of 350 V and a continuous collector current rating of 0.5 A. The device supports a total power dissipation of 20 W at a case temperature of 25°C or lower. Key electrical characteristics include a DC current gain ranging from 5 to 250 depending on collector current, a transition frequency of 10 MHz, and a collector-base capacitance of 25 pF.

Feature Summary

High-voltage capability with a 350 V collector-emitter breakdown voltage
Robust thermal performance with a junction-to-case resistance of 6.25 °C/W
Designed for high-gain applications with a minimum DC current gain of 30 at 100 mA

Applications

Output amplifiers
Low current, high voltage converters
AC line relays

Procurement Notes

Verify component authenticity through authorized channels due to potential availability issues. Confirm that the specific order matches the SOT-32 package type and STMicroelectronics manufacturing origin. Ensure compliance with RoHS status requirements as indicated in distributor records. Validate datasheet revisions against the latest official documentation before finalizing procurement specifications.

Selection Notes

Select this component for circuits requiring high voltage isolation and moderate current handling within a standard through-hole footprint. Evaluate thermal management strategies carefully, as the 20 W power rating is strictly dependent on maintaining the case temperature at or below 25°C. Consider the transition frequency limits when designing for signal processing or switching speeds exceeding 10 MHz.

Part Context

This part belongs to the general-purpose NPN bipolar junction transistor family produced by STMicroelectronics. It utilizes planar technology and an epitaxial base structure to achieve its specified voltage and current ratings. The SOT-32 package provides a standardized mechanical form factor compatible with common PCB mounting techniques for discrete semiconductor devices.