2N5660

Overview

The 2N5660 is a single NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter voltage (VCEO) of 200 V and a collector-base voltage (VCBO) of 250 V. The device supports a maximum DC collector current of 2 A with a power dissipation rating of 2 W at 25°C case temperature. It utilizes a TO-5 metal can package with three pins, designed for through-hole mounting. The component operates within a junction temperature range of -65°C to +200°C.

Feature Summary

• High-voltage capability with 200 V collector-emitter breakdown
• Robust thermal performance supporting up to 200°C junction temperature
• Durable metal can construction suitable for harsh environments

Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial control systems requiring rugged discrete transistors

Procurement Notes

Verify the specific qualification level (JAN, JANTX, or JANTXV) required for your application, as reliability standards vary across these variants. Confirm that the TO-5 through-hole package aligns with your PCB layout constraints. Ensure thermal management strategies account for the 2 W power dissipation limit at the specified case temperature to maintain safe operating conditions.

Selection Notes

Select this component when a high-voltage NPN BJT with moderate current handling is needed in a hermetic or robust metal package. Compare against the 2N5662 for lower power applications or the 2N5666 for higher current requirements. Ensure the design accommodates the physical dimensions and pinout of the TO-5 cylindrical package.

Part Context

This part belongs to a family of NPN power silicon transistors qualified under MIL-PRF-19500 specifications. It is commonly grouped with related devices such as the 2N5661, 2N5662, and 2N5663, which share similar structural characteristics but differ in voltage and current ratings. These components are typically used in military and aerospace-grade electronics where long-term stability and radiation hardness are critical.

Replacement Considerations

Direct substitutes include other MIL-qualified NPN transistors from the same series, such as the 2N5661 or 2N5662, provided their electrical ratings meet the circuit requirements. Verify pin compatibility and thermal characteristics before substitution.