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The 2N5660U3 is a single NPN silicon power bipolar junction transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 200V and supports a maximum continuous collector current of 2A. The device utilizes a surface-mount TO-220AB package, providing robust thermal dissipation capabilities with a power rating of 2W. Qualified under MIL-PRF-19500/454 standards, it ensures reliability in demanding environments.
Verify the specific suffix U3 indicates the surface-mount TO-220AB variant distinct from through-hole versions. Confirm MIL-PRF-19500/454 qualification status is required for the intended application. Ensure compatibility with RoHS directives if applicable to the project constraints. Cross-reference datasheet electrical characteristics against circuit requirements before finalizing procurement.
Select this component when a surface-mount solution is preferred over traditional through-hole packages for power handling. The 200V rating suits moderate high-voltage applications requiring 2A current capacity. Consider the TO-220AB footprint constraints and thermal management needs during layout. Compare against standard commercial grade parts if military qualification is not strictly necessary.
This part belongs to the Microchip (formerly Microsemi) 2N566x series of NPN power transistors. The series includes variants like 2N5660, 2N5661, and 2N5662, differentiated by voltage ratings and packaging. The U3 suffix specifically denotes the surface-mount configuration within this family, offering alternative mounting options for assembly processes.
Direct substitutes include other MIL-PRF-19500/454 qualified NPN transistors with matching 200V VCEO and 2A IC ratings. Verify pinout compatibility for the TO-220AB package. Commercial equivalents may lack the specified military qualification but can be considered if environmental requirements allow.