2N5661

Overview

The 2N5661 is a single-element NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It is designed for high-voltage switching and amplification applications, featuring a collector-emitter voltage rating of 200 V and a maximum continuous collector current of 2 A. The device operates within a temperature range extending up to +200°C and offers a minimum DC current gain (hFE) of 25. Qualified per MIL-PRF-19500/454, it supports military-grade reliability standards.

Feature Summary

• Qualified per MIL-PRF-19500/454 for military-grade reliability
• High operating junction temperature capability up to +200°C
• Single-element NPN silicon construction

Applications

• Military-grade switching circuits
• High-voltage amplifier stages
• Power control systems requiring ruggedized components

Procurement Notes

Verify the specific suffix (e.g., U3) against the required qualification level, as variants exist under the same base number. Confirm RoHS compliance status, as some listings indicate non-compliance. Ensure the supplier provides traceability documentation consistent with MIL-PRF-19500 requirements for defense or aerospace procurement.

Selection Notes

Select this component when a robust NPN transistor with 200V breakdown and 2A current capacity is needed in a through-hole package. Compare against the 2N5663E3 if higher voltage ratings are required, or the JAN2N5661U3 if specific military lot traceability is mandated. Evaluate thermal management needs given the high-temperature operation capability.

Part Context

This part belongs to the 2N566x series of NPN power transistors produced by Microchip Technology (formerly Microsemi). The series includes variants like the 2N5660, 2N5662, and 2N5663, differentiated primarily by their voltage ratings and specific military qualification levels. These devices are standardized under the MIL-PRF-19500 specification.

Replacement Considerations

Public confirmed substitute part numbers: 2N5661U3, JAN2N5661U3.