2N5661U3

Overview

The JAN2N5661U3 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 2 A and a maximum power dissipation of 20 W. The device supports a minimum DC current gain (hFE) of 25 and operates at temperatures up to 200 °C. It is available in surface-mount configurations.

Feature Summary

• Military-grade reliability for harsh environments
• High thermal stability with extended temperature range
• Single NPN configuration for power switching

Applications

• Military aerospace systems
• High-reliability power amplification
• Ruggedized electronic circuits

Procurement Notes

Verify the JAN prefix indicates MIL-STD compliance. Confirm the U3 suffix matches the required package variant. Check RoHS status as it may be non-compliant for commercial use. Validate the manufacturer source directly from Microchip authorized channels to ensure authenticity.

Selection Notes

Select this component when military qualification and high-temperature operation are mandatory. Ensure the 2 A current rating and 20 W power dissipation meet the circuit requirements. Verify the surface-mount package compatibility with the PCB layout design constraints.

Part Context

This part belongs to the JAN series of transistors, which are designed for defense and aerospace applications. It provides enhanced durability compared to commercial equivalents. The device is part of Microchip's portfolio of high-reliability discrete semiconductors.

Replacement Considerations

Check for direct JAN2N5661 equivalents. Verify pinout and electrical parameters match exactly. Consult Microchip for qualified substitute parts if availability is an issue.