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The Microchip Technology 2N5662 is an NPN silicon power bipolar junction transistor (BJT) designed for high-voltage applications. It features a collector-emitter voltage rating of 200 V and a continuous collector current capacity of 2 A. The device supports a maximum power dissipation of 1 W at 25°C ambient temperature. It utilizes a through-hole bulk package configuration suitable for general-purpose switching and amplification tasks in industrial environments.
Verify the specific manufacturing lot and revision level against the latest Microchip Product Change Notification dated January 23, 2024. Confirm that the procurement source provides original manufacturer documentation to ensure compliance with military-grade specifications. Check for any obsolescence notices or alternative sourcing recommendations directly from Microchip Technology before finalizing acquisition plans.
Select this component when a ruggedized NPN BJT with 200 V blocking capability is required. Ensure the application design accommodates the 1 W power dissipation limit at the expected operating temperature. Verify that the through-hole form factor fits the target PCB layout constraints. Consider thermal management strategies if operation exceeds standard ambient conditions.
The 2N5662 belongs to a family of military-qualified silicon transistors produced by Microchip Technology. It shares structural similarities with related parts like the 2N5660 and 2N5663 but differs in specific voltage and power ratings. This series is characterized by its reliability in harsh environments and adherence to strict military performance standards.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology directly for qualified alternatives or cross-reference options.