2N5671

2N5671

$46.38
  • Description:TRANS NPN 90V 30A TO-3
  • Series:-

SKU:151f63bd8057 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 90V 30A TO-3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):30 A
  • Voltage - Collector Emitter Breakdown (Max):90 V
  • Vce Saturation (Max) @ Ib, Ic:5V @ 6A, 30A
  • Current - Collector Cutoff (Max):10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20A, 5V
  • Power - Max:6 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3

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2N5671

Overview

The 2N5671 is a silicon NPN power transistor manufactured by ISC, housed in a TO-204AA (TO-3) package. It is designed for high current and fast switching industrial applications. Key absolute maximum ratings include a collector-base voltage of 90 V with the emitter open, a collector-emitter voltage of 90 V with the base open, and an emitter-base voltage of 10 V. The device supports a continuous collector current of 30 A and a total power dissipation of 150 W at a case temperature of 25 °C. It operates within a junction temperature range of -65 °C to +200 °C.

Feature Summary

  • High current capability suitable for demanding industrial loads
  • Fast switching performance optimized for rapid transition times
  • Robust thermal design utilizing the TO-3 metal can package

Applications

  • High current industrial switching circuits
  • Fast switching power control systems
  • Industrial motor drive interfaces

Procurement Notes

Verify the manufacturer origin, as the 2N5671 designation is historically associated with multiple vendors including ISC. Confirm that the specific unit received matches the TO-204AA outline and pin configuration provided in the official datasheet. Ensure the component meets the required absolute maximum ratings for your specific circuit design before integration.

Selection Notes

Select this component when designing circuits requiring high current handling up to 30 A and fast switching speeds. The TO-3 package necessitates appropriate heatsinking solutions to manage the 150 W power dissipation rating effectively. Consider the 90 V breakdown voltage limits when selecting components for higher voltage rail applications.

Part Context

This part belongs to the category of silicon NPN power transistors. It is distinct from low-power signal transistors due to its ability to handle significant current and power levels. The TO-3 package provides superior thermal conductivity compared to plastic packages, making it suitable for high-power density applications where heat dissipation is critical.

Replacement Considerations

Consult official datasheets for direct replacements such as the 2N5672, which shares similar physical characteristics but may differ in voltage ratings. Verify pinout compatibility and thermal resistance values when substituting with other TO-3 packaged NPN power transistors.

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