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The 2N5671 is a silicon NPN power transistor manufactured by ISC, housed in a TO-204AA (TO-3) package. It is designed for high current and fast switching industrial applications. Key absolute maximum ratings include a collector-base voltage of 90 V with the emitter open, a collector-emitter voltage of 90 V with the base open, and an emitter-base voltage of 10 V. The device supports a continuous collector current of 30 A and a total power dissipation of 150 W at a case temperature of 25 °C. It operates within a junction temperature range of -65 °C to +200 °C.
Verify the manufacturer origin, as the 2N5671 designation is historically associated with multiple vendors including ISC. Confirm that the specific unit received matches the TO-204AA outline and pin configuration provided in the official datasheet. Ensure the component meets the required absolute maximum ratings for your specific circuit design before integration.
Select this component when designing circuits requiring high current handling up to 30 A and fast switching speeds. The TO-3 package necessitates appropriate heatsinking solutions to manage the 150 W power dissipation rating effectively. Consider the 90 V breakdown voltage limits when selecting components for higher voltage rail applications.
This part belongs to the category of silicon NPN power transistors. It is distinct from low-power signal transistors due to its ability to handle significant current and power levels. The TO-3 package provides superior thermal conductivity compared to plastic packages, making it suitable for high-power density applications where heat dissipation is critical.
Consult official datasheets for direct replacements such as the 2N5672, which shares similar physical characteristics but may differ in voltage ratings. Verify pinout compatibility and thermal resistance values when substituting with other TO-3 packaged NPN power transistors.