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The 2N5672 is a single NPN bipolar junction transistor manufactured by Microchip Technology. It features a maximum power dissipation of 6 W and supports an operating collector current of 30 A with a breakdown voltage of 120 V. The device utilizes a TO-3 through-hole package, providing robust thermal management for high-power applications. It operates within a temperature range of -65°C to 200°C (TJ) and exhibits a transition frequency of 50 MHz.
Verify the manufacturer origin, as the 2N5672 specification is documented by multiple entities including Microchip Technology, TT Electronics, and SavantIC. Confirm that the specific unit received matches the required electrical characteristics and package type. Ensure the supplier provides valid traceability documentation to guarantee component authenticity and performance reliability in critical applications.
Select this component when designing circuits necessitating high current capacity up to 30 A and substantial power dissipation. The TO-3 package is suitable for applications requiring efficient heat sinking and mechanical stability. Consider the wide temperature tolerance for environments subject to extreme thermal variations. Evaluate the 120 V breakdown voltage against circuit peak requirements to ensure safe operational margins.
The 2N5672 belongs to the category of silicon NPN power transistors designed for general-purpose use. It is functionally related to the 2N5671 series. The component serves as a discrete semiconductor device for managing high-energy signals in electronic systems. Its construction supports reliable operation in demanding industrial and commercial hardware configurations.
The 2N5671 is a confirmed equivalent part number within the same product family.