2N5672

2N5672

$46.38
  • Description:TRANS NPN 120V 30A TO-3
  • Series:-

SKU:01ce01e3dcde Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 120V 30A TO-3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):30 A
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:5V @ 6A, 30A
  • Current - Collector Cutoff (Max):10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20A, 5V
  • Power - Max:6 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3

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2N5672

Overview

The 2N5672 is a single NPN bipolar junction transistor manufactured by Microchip Technology. It features a maximum power dissipation of 6 W and supports an operating collector current of 30 A with a breakdown voltage of 120 V. The device utilizes a TO-3 through-hole package, providing robust thermal management for high-power applications. It operates within a temperature range of -65°C to 200°C (TJ) and exhibits a transition frequency of 50 MHz.

Feature Summary

  • High power handling capability with 6 W dissipation rating
  • Wide operating temperature range extending to 200°C
  • Through-hole TO-3 package for secure mounting

Applications

  • General-purpose switching circuits
  • Power amplification stages
  • Industrial control systems requiring high current handling

Procurement Notes

Verify the manufacturer origin, as the 2N5672 specification is documented by multiple entities including Microchip Technology, TT Electronics, and SavantIC. Confirm that the specific unit received matches the required electrical characteristics and package type. Ensure the supplier provides valid traceability documentation to guarantee component authenticity and performance reliability in critical applications.

Selection Notes

Select this component when designing circuits necessitating high current capacity up to 30 A and substantial power dissipation. The TO-3 package is suitable for applications requiring efficient heat sinking and mechanical stability. Consider the wide temperature tolerance for environments subject to extreme thermal variations. Evaluate the 120 V breakdown voltage against circuit peak requirements to ensure safe operational margins.

Part Context

The 2N5672 belongs to the category of silicon NPN power transistors designed for general-purpose use. It is functionally related to the 2N5671 series. The component serves as a discrete semiconductor device for managing high-energy signals in electronic systems. Its construction supports reliable operation in demanding industrial and commercial hardware configurations.

Replacement Considerations

The 2N5671 is a confirmed equivalent part number within the same product family.

2N56722N5672
$46.38
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