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The Microchip Technology 2N5679 is a single PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It utilizes an epitaxial planar silicon process to deliver robust performance in high-voltage environments. The device supports a collector-emitter voltage of 100V and handles a continuous collector current of 1A. With a maximum power dissipation of 1W, it is suitable for driving high-power transistors. The component operates within a temperature range of -65°C to +200°C and features a gain bandwidth product of 30MHz. It is housed in a TO-39 metal can package.
Verify the manufacturer source carefully, as the 2N5679 is a standard part number produced by multiple vendors including Central Semiconductor and onsemi. Ensure the specific lot or datasheet aligns with Microchip Technology specifications if that supplier is required. Confirm the TO-39 package variant matches your board layout requirements before finalizing orders.
Select this component when a PNP transistor with 100V capability and 1A current rating is needed for driving larger power devices. The TO-39 metal case offers superior thermal dissipation compared to plastic packages, making it ideal for applications requiring operation up to 200°C. Consider the 30MHz gain bandwidth if high-frequency signal processing is involved in the circuit design.
The 2N5679 belongs to a family of complementary silicon power transistors, often paired with NPN counterparts like the 2N5681. This series is manufactured using the epitaxial planar process to ensure consistent electrical characteristics across production batches. The TO-39 metal can packaging provides hermetic sealing, enhancing reliability in harsh industrial or military environments where long-term stability is critical.