2N5680

2N5680

$18.39
  • Description:TRANS PNP 120V 1A TO39
  • Series:-

SKU:cea7860b3fbe Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 120V 1A TO39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 250mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)

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2N5680

Overview

The Microchip Technology 2N5680 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 1 A. The device dissipates up to 1 W of power and operates within a junction temperature range of -65°C to +175°C. Key electrical characteristics include a minimum DC current gain of 40 at 250 mA and 2 V, with a maximum collector cutoff current of 10 µA.

Feature Summary

  • Utilizes a hermetically sealed TO-39 metal can package for robust environmental protection.
  • Engineered for high-voltage switching applications with a 120 V collector-emitter breakdown capability.
  • Provides reliable amplification and switching functions with a 1 A continuous collector current capacity.

Applications

  • High-voltage switching circuits
  • Power amplifier stages
  • Industrial control systems

Procurement Notes

Verify the specific manufacturer source, as onsemi lists this part number while Microchip listings may indicate different origins or legacy status. Confirm RoHS compliance requirements, as some sources indicate non-compliance. Ensure the TO-39 pinout matches the design schematic before integration. Check for obsolescence notices or lifecycle changes from the supplier.

Selection Notes

Select this component when a ruggedized, high-voltage PNP transistor is required for through-hole assembly. The TO-39 package offers superior thermal dissipation compared to plastic equivalents. Consider the 120 V rating for safety margins in inductive load switching. Verify that the 1 A current limit meets the circuit's peak demand without exceeding the 1 W power dissipation constraint.

Part Context

The 2N5680 belongs to the family of standard military-grade and industrial BJT transistors. It shares the 2N568 series designation, often used in legacy aerospace and defense electronics. The TO-39 package is a standard hermetic style historically prevalent in high-reliability applications requiring long-term stability under harsh conditions.

FAQ

What is the maximum collector-emitter voltage for the 2N5680?

The maximum collector-emitter voltage (Vceo) is 120 V.

Does the 2N5680 come in a surface-mount package?

No, it is exclusively available in the through-hole TO-39 metal can package.

What is the minimum DC current gain specified?

The minimum DC current gain (hFE) is 40, measured at a collector current of 250 mA and a collector-emitter voltage of 2 V.

2N56802N5680
$18.39
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