SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 2N5680 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 1 A. The device dissipates up to 1 W of power and operates within a junction temperature range of -65°C to +175°C. Key electrical characteristics include a minimum DC current gain of 40 at 250 mA and 2 V, with a maximum collector cutoff current of 10 µA.
Verify the specific manufacturer source, as onsemi lists this part number while Microchip listings may indicate different origins or legacy status. Confirm RoHS compliance requirements, as some sources indicate non-compliance. Ensure the TO-39 pinout matches the design schematic before integration. Check for obsolescence notices or lifecycle changes from the supplier.
Select this component when a ruggedized, high-voltage PNP transistor is required for through-hole assembly. The TO-39 package offers superior thermal dissipation compared to plastic equivalents. Consider the 120 V rating for safety margins in inductive load switching. Verify that the 1 A current limit meets the circuit's peak demand without exceeding the 1 W power dissipation constraint.
The 2N5680 belongs to the family of standard military-grade and industrial BJT transistors. It shares the 2N568 series designation, often used in legacy aerospace and defense electronics. The TO-39 package is a standard hermetic style historically prevalent in high-reliability applications requiring long-term stability under harsh conditions.
The maximum collector-emitter voltage (Vceo) is 120 V.
No, it is exclusively available in the through-hole TO-39 metal can package.
The minimum DC current gain (hFE) is 40, measured at a collector current of 250 mA and a collector-emitter voltage of 2 V.