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Product Detailed Parameters
- Description：120V 1A 1W TH TRANSISTOR-SMALL S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 200mA, 1A
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 2V
- Power - Max：1 W
- Frequency - Transition：30MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The 2N5680 PBFREE is a silicon PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 1 A and a transition frequency of 30 MHz. The device supports a collector-emitter voltage of 120 V and a base-emitter voltage of 4 V. Operating temperatures range from -65°C to +200°C junction temperature. DC current gain (hFE) ranges from a minimum of 40 to a maximum of 150. The component is supplied in bulk packaging without lead.
Feature Summary
- Epitaxial planar silicon construction for high voltage applications
- Lead-free plating compliant with environmental standards
- High operating junction temperature capability up to 200°C
Applications
- Amplifier circuits
- Switching applications
- High voltage power electronics
Procurement Notes
Verify the exact part number includes the PBFREE suffix to ensure lead-free compliance. Confirm package type matches design requirements. Check datasheet for thermal resistance values during integration. Validate supply chain authenticity through authorized distributors. Ensure storage conditions maintain component integrity prior to assembly.
Selection Notes
Select this component for PNP switching or amplification tasks requiring 120 V blocking capability. Consider the 30 MHz transition frequency for moderate speed applications. Evaluate thermal management needs given the wide operating temperature range. Compare hFE variations against circuit biasing requirements. Ensure complementary NPN devices are available if push-pull configurations are necessary.
Part Context
This transistor belongs to a series of complementary silicon power transistors including the 2N5679, 2N5681, and 2N5682. These devices are designed for high current and high voltage applications using epitaxial planar technology. The 2N5680 serves as the PNP counterpart in this family, offering matched characteristics for balanced circuit designs.
Replacement Considerations
Direct substitutes include the 2N5679, 2N5681, and 2N5682 within the same complementary series. Verify pinout compatibility before substitution. Cross-reference electrical parameters such as Vceo and Ic to ensure adequate performance margins in the target application.
