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The onsemi 2N5680 is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-39 metal can package. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 120 V. The device supports a maximum power dissipation of 1 W with an operating temperature range from -65°C to +150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 250 mA and 2 V, and a maximum collector-base cutoff current of 10 µA.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and pin alignment prior to installation. Ensure storage conditions meet moisture sensitivity level requirements to prevent degradation before soldering.
Select this component when a PNP transistor with 120 V blocking capability and 1 A continuous current rating is required. The TO-39 package offers superior heat dissipation compared to plastic equivalents. Verify that the application circuit accommodates the specified saturation voltage and current gain parameters under expected load conditions.
The 2N5680 belongs to the standard discrete semiconductor product line from onsemi. It serves as a legacy replacement for older PNP designs in industrial and commercial electronics. The component is part of a broader portfolio of bipolar transistors engineered for reliability in demanding environments.
Check for direct cross-reference availability from other manufacturers offering identical TO-39 PNP specifications. Verify pinout compatibility and thermal resistance values before substituting. Ensure any alternative meets the same voltage and current ratings.