2N5681 PBFREE

Overview

The 2N5681 PBFREE is a silicon NPN epitaxial planar power transistor manufactured by Central Semiconductor Corp. It features a TO-39 metal package designed for rugged operation in demanding environments. Key electrical specifications include a collector-emitter voltage of 100 V, a continuous collector current of 1 A, and a power dissipation rating of 1 W. The device exhibits a gain bandwidth product (fT) of 30 MHz and an emitter-base voltage of 4 V. Operating temperature ranges from -65°C to +200°C, with a collector-emitter saturation voltage of 2 V.

Feature Summary

• Complementary silicon power transistor utilizing epitaxial planar process technology
• Durable TO-39 metal case construction ensuring rugged operation in demanding environments
• Designed specifically for use as drivers for high power transistors
• Suitable for general purpose amplifier applications

Applications

• Driver circuits for high power transistors
• General purpose amplifier stages
• High voltage switching applications requiring 100V capability
• Rugged electronic systems operating within extreme temperature ranges

Procurement Notes

Verify the part number includes the PBFREE suffix to ensure lead-free plating compliance as specified by the manufacturer. Confirm the TO-39 package style matches your board layout requirements. Cross-reference the 100V collector-emitter voltage and 1A current ratings against your specific circuit load demands. Ensure the operating temperature range of -65°C to +200°C aligns with your environmental conditions. Validate that the 1W power dissipation rating is sufficient for your thermal management design.

Selection Notes

Select this component when a high-voltage NPN driver is required for general purpose amplification or transistor driving tasks. The TO-39 package offers superior thermal performance compared to plastic alternatives, making it suitable for higher power dissipation scenarios up to 1W. Consider the 30MHz transition frequency for applications requiring moderate speed switching. The wide operating temperature range supports deployment in harsh industrial or aerospace environments where standard commercial grade parts may fail.

Part Context

The 2N5681 belongs to a series of complementary silicon power transistors manufactured via epitaxial planar processes. It is paired with the 2N5679 (PNP) and 2N5682 (NPN) variants to form complete complementary sets. These devices are housed in Jedec TO-39 metal cases, emphasizing durability and heat dissipation capabilities essential for power handling applications.

Replacement Considerations

Direct substitutes include other 100V, 1A NPN transistors in TO-39 packages such as the 2N3055 family variants if pinout compatibility allows. Verify that any replacement maintains the 1W power dissipation and 30MHz fT specifications. Ensure the alternative device supports the same -65°C to +200°C operating temperature range for equivalent environmental robustness.