2N5682 PBFREE

Overview

The 2N5682 PBFREE is a high-voltage silicon epitaxial planar NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 1 A. The device supports a power dissipation of 1 W and exhibits a gain bandwidth product of 30 MHz. Electrical characteristics include an emitter-base voltage of 4 V and a collector-emitter saturation voltage of 2 V. Thermal resistance values are specified at 175 °C/W (junction-to-ambient) and 17.5 °C/W (junction-to-case). The component operates within a junction temperature range of -65 °C to +200 °C.

Feature Summary

• High-voltage silicon epitaxial planar construction for robust performance
• Metal TO-39 package designed for thermal efficiency
• Wide operating temperature range suitable for demanding environments

Applications

• Driver circuits for high-voltage applications
• General-purpose switching in industrial equipment
• Amplification stages requiring high voltage tolerance

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with RoHS standards and lead-free requirements. Confirm that the TO-39 metal case variant matches the intended mechanical and thermal design constraints. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when circuit designs require a single NPN transistor capable of handling 120 V collector-emitter voltage and 1 A current. The 30 MHz transition frequency makes it suitable for moderate-speed switching or amplification tasks. Ensure the application can accommodate the through-hole mounting style and the thermal management requirements associated with the TO-39 metal package.

Part Context

The 2N5682 belongs to a family of high-voltage NPN transistors, often paired with the 2N5681. These devices are engineered for use as drivers in high-voltage systems. The PBFREE designation indicates a lead-free manufacturing process compliant with environmental directives. The metal TO-39 case provides superior heat dissipation compared to plastic packages, supporting the 1 W power dissipation rating.

Replacement Considerations

Direct substitutes may include other high-voltage NPN transistors in TO-39 packages with comparable VCEO and IC ratings. Verify pinout compatibility and thermal resistance specifications when considering alternative manufacturers. Ensure any replacement maintains the required 30 MHz gain bandwidth product for the specific application.