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Product Detailed Parameters
- Description：TRANS NPN 120V 1A TO39
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 2V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39 (TO-205AD)
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Overview
The 2N5682E4 is an NPN silicon amplifier transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 1 A. The device dissipates up to 1 W of power in a TO-39 metal can package. It offers a minimum DC current gain (hFE) of 40 at 250 mA and 2 V, with a maximum saturation voltage of 1 V at 500 mA. The component supports three levels of product assurance: JAN, JANTX, and JANTXV.
Feature Summary
- NPN silicon construction for general-purpose amplification
- High voltage capability up to 120 V
- Robust 1 A current handling capacity
- Military-grade product assurance levels available
Applications
- General-purpose amplification in consumer electronics
- Switching applications in industrial electronics
- Power BJT circuits requiring high voltage isolation
Procurement Notes
Verify the specific product assurance level (JAN, JANTX, or JANTXV) required for your application, as performance specifications vary between these grades. Confirm that the TO-39 through-hole package aligns with your PCB layout constraints. Ensure compliance with RoHS directives if applicable, as standard versions may not be compliant. Cross-reference datasheets for exact hFE and Vce(sat) limits corresponding to the ordered grade.
Selection Notes
Select this component when designing circuits requiring NPN switching or amplification with voltages up to 120 V and currents near 1 A. The TO-39 package provides thermal stability for 1 W dissipation. Consider the specific radiation hardness or reliability requirements associated with JAN, JANTX, or JANTXV grades if operating in harsh environments. Ensure base drive capabilities support the required saturation conditions.
Part Context
The 2N5682E4 belongs to the 2N568 series of single bipolar transistors. It is produced by Microchip Technology, which acquired Micrel. The E4 suffix typically indicates lead-free composition. This part serves as a replacement for older military-grade NPN transistors in legacy designs requiring robust power handling in a metal can package.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source data. Verify pinout compatibility and electrical parameters against potential alternatives such as the 2N5681 if considering cross-brand replacements.
