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Product Detailed Parameters
- Description：TRANS PNP 80V 20A TO-61
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：20 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：75 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package：TO-61
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Overview
The 2N5731 is a stud-mount PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter breakdown voltage of 80 V and a maximum collector current of 20 A. The device has a maximum power dissipation rating of 75 W. It operates within a junction temperature range of -65°C to 200°C. The component utilizes a TO-61 package configuration, designed for high-power applications requiring robust thermal management and direct mounting capabilities.
Feature Summary
- PNP polarity configuration for complementary circuit designs
- Stud-mount construction for efficient heat dissipation
- High current handling capability up to 20 A
- Extended operating temperature range for harsh environments
Applications
- Power amplifier stages in RF systems
- Switching circuits in industrial control units
- Complementary output stages in audio equipment
Procurement Notes
Verify the manufacturer origin carefully, as historical production involved Micrel before its acquisition by Microchip. Confirm the specific package variant matches the required mounting hardware. Ensure that the sourcing channel provides original components with traceable documentation to avoid counterfeit devices affecting reliability.
Selection Notes
Select this component when a PNP BJT with high current capacity and stud-mount thermal performance is required. Consider the 80 V breakdown limit and 75 W power rating against load requirements. Evaluate the TO-61 footprint compatibility with existing heatsink infrastructure and mounting constraints.
Part Context
This part belongs to the family of single bipolar transistors designed for power applications. It serves as a discrete semiconductor solution for medium-to-high power switching and amplification tasks. The stud-mount design distinguishes it from surface-mount alternatives, offering superior thermal conductivity for demanding electronic systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official Microchip channels or authorized distributors before considering alternative components.
