2N5741

$57.01

Description：TRANS PNP 60V 20A TO204AA
Series：-

SKU:ebc15b6b52ba Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 20A TO204AA
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：20 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 10mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：113 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204AA (TO-3)

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2N5741

Overview

The Microchip Technology 2N5741 is a silicon PNP power transistor housed in a hermetically sealed TO-3 metal package. It features a collector-emitter breakdown voltage of 60 V and a maximum power dissipation of 113 W. The device exhibits a saturation voltage of 1.5 V at an input current of 1 mA and collector current of 10 mA. Operating temperature ranges from -65°C to +150°C, with storage capabilities extending to similar extremes.

Feature Summary

Hermetically sealed TO-3 metal package for environmental protection
High power dissipation capability of 113 W
Designed for general-purpose switching and power amplifier applications

Applications

General-purpose switching circuits
Power amplifier stages
Industrial control systems requiring high reliability

Procurement Notes

Verify the manufacturer source carefully, as multiple entities including Savantic and ETC are associated with this part number in public archives. Confirm that the specific unit received matches the Microchip Technology specification sheet regarding pinout and electrical ratings. Ensure the TO-3 package integrity remains uncompromised during handling to maintain hermetic sealing standards required for aerospace or military-grade performance.

Selection Notes

Select the 2N5741 when high power handling and robust packaging are critical. Its PNP polarity suits specific circuit topologies requiring negative rail management. Consider the TO-3 form factor for thermal management needs where surface-mount alternatives are insufficient. Evaluate the 60 V breakdown limit against peak transient voltages in the target application to ensure adequate safety margins.

Part Context

This component belongs to the family of silicon PNP power transistors, often grouped with counterparts like the 2N5742. These devices are historically significant in high-power analog and switching designs. The TO-3 package provides superior heat sinking compared to plastic encapsulated variants, making it suitable for demanding environments where long-term stability and thermal resistance are paramount design constraints.