SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 2N5742 is a silicon PNP power bipolar transistor housed in a TO-3 metal flange mount package. It features a maximum collector current of 20 A and a collector-emitter breakdown voltage of 100 V. The device has a minimum DC current gain (hFE) of 20 and operates within a junction temperature range of -65°C to 200°C. Designed for through-hole mounting, it utilizes a two-pin configuration with bottom pins.
Verify the specific manufacturer source when ordering, as the 2N5742 designation is utilized by multiple semiconductor producers including Inchange Semiconductor and Quanzhou Jinmei. Confirm that the component matches the Microchip Technology specification sheet regarding electrical characteristics and physical dimensions to ensure compatibility with existing designs.
Select this component for applications requiring high current handling and wide thermal tolerance. The TO-3 package facilitates effective heat dissipation for power management tasks. Ensure the circuit design accommodates the PNP polarity and the required base drive currents to achieve the specified saturation voltages at full load.
The 2N5742 belongs to the family of silicon PNP power transistors designed for robust performance. It is often grouped with similar devices like the 2N5741 and 2N5743 for complementary or parallel power switching solutions. The TO-3 form factor remains a standard for high-power discrete transistors in industrial and military-grade electronics.
Direct substitutes include the 2N5741 and 2N5743 from the same series. Other manufacturers produce equivalent PNP power transistors in TO-3 packages; verify pinout compatibility and electrical ratings before substitution.