2N5744

2N5744

$27.40
  • Description:TRANS PNP 100V 20A TO66
  • Series:-

SKU:eb7eda0d7552 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 100V 20A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:43.7 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

Download product information

2N5744

Overview

The Microchip Technology 2N5744 is a silicon PNP power transistor designed for high-current applications. It utilizes a TO-66 (TO-213AA) through-hole package to facilitate efficient thermal dissipation. The device features a maximum collector current of 20 A and a collector-emitter breakdown voltage of 100 V. With a power dissipation rating of 43.7 W, it supports robust performance in demanding electronic circuits requiring reliable switching or amplification capabilities.

Feature Summary

  • High-power capability with 20 A collector current handling
  • Robust 100 V collector-emitter breakdown voltage rating
  • Durable TO-66 through-hole package for effective heat management

Applications

  • High-current switching circuits
  • Power amplifier stages
  • Industrial control systems

Procurement Notes

Verify the specific manufacturer source when ordering, as multiple suppliers including Power Physics and Inchange Semiconductor produce this part number. Confirm that the TO-66 package variant matches your board layout requirements. Ensure the component meets the required 43.7 W power dissipation specifications for your thermal design. Cross-reference datasheets from different vendors to confirm pinout compatibility and exact electrical tolerances before finalizing procurement.

Selection Notes

Select the 2N5744 when a PNP bipolar junction transistor is required for high-current loads up to 20 A. Its 100 V breakdown voltage makes it suitable for medium-voltage power applications. The through-hole TO-66 package is ideal for prototypes or industrial equipment where superior thermal conductivity and mechanical stability are prioritized over surface-mount density. Evaluate thermal resistance requirements against the 43.7 W dissipation limit.

Part Context

This component belongs to the family of silicon PNP power transistors manufactured by Microchip Technology and other semiconductor providers. It serves as a discrete active element for power electronics, distinct from integrated circuit solutions. The TO-66 package provides a standardized footprint for legacy and industrial designs, ensuring compatibility with existing through-hole manufacturing processes and heatsinking infrastructure.

Replacement Considerations

Equivalent parts include the 2N5743, which shares similar silicon PNP characteristics. Verify pinout alignment and thermal performance when substituting with units from alternative manufacturers such as Power Physics or Inchange Semiconductor.

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