2N5760

2N5760

$57.01
  • Description:TRANS NPN 140V 6A TO204AA
  • Series:-

SKU:ee575bcc76a5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 140V 6A TO204AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:150 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA (TO-3)

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2N5760

Overview

The Microchip Technology 2N5760 is a silicon NPN power bipolar junction transistor designed for high-current applications. It features a maximum collector current of 6A and a collector-emitter breakdown voltage of 140V. The device utilizes a TO-3 metal flange mount package with two pins, facilitating efficient heat dissipation. Key electrical characteristics include a minimum DC current gain (hFE) of 15 and a maximum junction temperature rating of 175°C. With a maximum collector power dissipation of 150W, this component is suitable for robust power switching and amplification tasks in industrial environments.

Feature Summary

  • High-power capability with 150W dissipation rating
  • Robust TO-3 metal can construction for thermal management
  • NPN silicon technology for reliable switching performance

Applications

  • Industrial motor control systems
  • High-power linear regulation circuits
  • Power amplifier stages

Procurement Notes

Verify the specific manufacturer source when procuring, as multiple vendors including Microsemi and New Jersey Semi-Conductor have produced this part number. Confirm lead times and availability status, as some sources indicate discontinued or obsolete status. Ensure the TO-3 package variant matches your thermal design requirements. Check for compliance with RoHS standards if required by your manufacturing process.

Selection Notes

Select the 2N5760 for applications requiring high current handling up to 6A and moderate voltage blocking at 140V. The TO-3 package necessitates board space for flange mounting and heatsinking. Consider the minimum hFE of 15 when designing base drive circuits to ensure saturation. Evaluate thermal resistance requirements against the 150W dissipation limit for your specific ambient conditions.

Part Context

The 2N5760 belongs to the family of silicon NPN power transistors historically manufactured by companies such as Motorola and Microsemi. It serves as a discrete component for power electronics, distinct from integrated solutions. The TO-3 metal case provides superior thermal conductivity compared to plastic packages, making it a legacy choice for high-power analog and switching applications where reliability under stress is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided documentation. Users should consult official Microchip or distributor cross-reference guides for equivalent devices with matching TO-3 packaging and similar electrical ratings.

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