2N5770_D26Z

$0.04

Description：RF TRANS NPN 15V TO-92-3
Series：-

SKU:ba8a1d1bb86f Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：6dB @ 60MHz
Gain：15dB
Power - Max：350mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 8mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5770_D26Z

Overview

The onsemi 2N5770_D26Z is an NPN RF transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 4.5 V. The device supports a continuous collector current of 50 mA with a total power dissipation of 350 mW at 25°C. Operating temperatures range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 20 to 200 at IC = 3.0 mA, and a small-signal current gain (hfe) of 9.0 to 18 at 100 MHz. Thermal resistance is 125 °C/W junction-to-case and 357 °C/W junction-to-ambient.

Feature Summary

Designed for use as RF amplifiers, oscillators, and multipliers within specified collector current ranges.

Applications

RF amplifier circuits
Oscillator designs
Frequency multiplier applications

Procurement Notes

Verify the manufacturer origin carefully, as this part number was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the D26Z suffix corresponds to the specific tape and reel packaging configuration required for your automated assembly process. Ensure the component meets all necessary environmental compliance standards for your target market.

Selection Notes

Select this component when an NPN silicon planar epitaxial transistor is required for low-power RF applications operating up to several hundred megahertz. Consider the 15 V collector-emitter breakdown limit and 50 mA maximum continuous current constraints during circuit design. Evaluate the thermal resistance values if the application involves sustained operation near the upper temperature limits.

Part Context

This component belongs to the 2N5770 series of discrete NPN RF transistors. Originally manufactured by Fairchild Semiconductor, production rights were transferred to onsemi following corporate acquisitions. The device utilizes a silicon planar epitaxial process and is packaged in the standard TO-92 form factor, maintaining historical specifications for legacy RF circuit replacements.

Replacement Considerations

MPS5179

FAQ

What is the maximum operating frequency for this transistor?

The datasheet specifies functional test parameters up to 500 MHz, including power output and collector efficiency measurements at that frequency.

How does the D26Z suffix affect the component's electrical function?

The D26Z suffix indicates the specific tape and reel packaging style and quantity (2,000 units per reel). It does not alter the electrical characteristics or internal structure of the transistor.