SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5770_D74Z is an NPN RF transistor housed in a TO-92 package. It operates with a collector-emitter voltage of 15 V and a collector-base voltage of 30 V, supporting a continuous collector current of 50 mA. The device dissipates up to 350 mW at 25°C, derating by 2.8 mW/°C above that temperature. Designed for RF amplifiers, oscillators, and multipliers, it functions optimally within a collector current range of 1.0 mA to 30 mA. Electrical characteristics include a DC current gain (hFE) ranging from 20 to 200 and a noise figure of 6.0 dB at 60 MHz.
Verify the D74Z suffix indicates Ammo Pack packaging containing 2,000 units per box. Confirm the component status as Full Production or Not In Production through official onsemi channels before finalizing procurement plans.
Select this component for low-power RF applications requiring an NPN configuration in a TO-92 package. Ensure the design accommodates the 350 mW power dissipation limit and verify that the required collector current falls within the recommended 1.0 mA to 30 mA operational range.
This part belongs to the discrete NPN RF transistor category. Originally manufactured by Fairchild Semiconductor, production rights were transferred to onsemi. The D74Z suffix specifically denotes the Ammo Pack tape and reel packaging format.
Consult official cross-reference documentation for verified substitutes. Generic replacements may differ in RF performance metrics such as noise figure and gain bandwidth product.
The maximum operating and storage junction temperature is +150 °C.
The D74Z suffix specifies the Ammo Pack packaging style, which contains 2,000 units per box.
The noise figure is typically 6.0 dB when tested at IC = 1.0 mA, VCE = 8.0 V, and f = 60 MHz.