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The onsemi 2N5771_D75Z is a PNP switching transistor designed for very high-speed saturated switching at collector currents up to 100 mA. It features a maximum collector-emitter voltage of 15 V and continuous collector current of 200 mA. The device operates within a junction temperature range of -55°C to +150°C with total power dissipation of 350 mW in the TO-92 package. Key electrical characteristics include a DC current gain (hFE) of 50 at IC=10 mA, saturation voltages of 0.18 V at IC=10 mA, and switching times (ton/toff) of 15 ns/20 ns.
Verify the specific D75Z suffix against official documentation to confirm the Ammo Pack packaging configuration and lead orientation. Ensure compatibility with existing thermal management designs given the 350 mW dissipation limit. Confirm component availability status as manufacturing transitions may affect supply continuity.
Select this component when high-speed switching performance is required alongside moderate current handling capabilities. The TO-92 through-hole package facilitates manual assembly or standard PCB mounting. Evaluate thermal resistance requirements carefully to ensure junction temperatures remain within the specified -55°C to +150°C operational range during continuous duty cycles.
This part belongs to the 2N5771 series of PNP transistors manufactured by onsemi/Fairchild. It serves as a general-purpose switching device suitable for replacing older discrete components in legacy designs. The D75Z suffix specifically denotes the Ammo Pack variant of the standard TO-92 housing.
Consult the manufacturer datasheet for direct equivalents such as the MMBT5771. Verify pinout compatibility and electrical parameter margins before substituting other PNP transistors from different manufacturers.