2N5781

Overview

The Microchip Technology 2N5781 is a silicon PNP power transistor housed in a hermetically sealed TO-39 metal package. It is designed for general-purpose switching and amplifier applications, featuring a maximum collector current of 3.5 A and a collector-emitter breakdown voltage of 65 V. The device offers a DC current gain range from 20 to 150 at 1 A and supports a maximum operating temperature of 200 °C with a power dissipation rating of 10 W.

Feature Summary

• Hermetically sealed TO-39 metal package construction
• High-speed switching and high-frequency performance capabilities
• Complementary design pairing with the 2N5784 NPN transistor

Applications

• General purpose switching circuits
• Amplifier stages
• High-frequency performance applications

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm that the specific unit matches the required PNP polarity and TO-39 package specifications. Ensure compliance with project requirements regarding non-RoHS status and EAR99 export classification before finalizing procurement orders.

Selection Notes

Select this component when a ruggedized, hermetically sealed PNP silicon transistor is required for high-current switching or amplification. Consider its complementary relationship with the 2N5784 NPN type for push-pull configurations. Evaluate thermal management needs against the 10 W dissipation limit and verify compatibility with the TO-39 mounting style.

Part Context

The 2N5781 belongs to a family of complementary silicon power transistors manufactured by Central Semiconductor and distributed by Microchip Technology. It serves as the PNP counterpart to the 2N5784 NPN transistor, providing matched characteristics for balanced circuit designs requiring robust performance in demanding environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.