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Product Detailed Parameters
- Description：NPN TRANSISTOR
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
Download product information
Overview
The 2N5785 is a silicon NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in TO-39-3 packages. The device features a collector-emitter voltage rating of 50 V and a collector current capacity of 1.2 A. It operates with a transition frequency of 30 MHz and supports a power dissipation of 1 W. These specifications define its electrical limits and physical configuration for circuit integration.
Feature Summary
- Utilizes silicon epitaxial-base technology for reliable switching performance
- Hermetically sealed TO-39 package ensures environmental durability
- Optimized for high-voltage applications within specified ratings
Applications
- High-voltage switching circuits
- Power supply regulation systems
- General-purpose amplifier stages
Procurement Notes
Verify the manufacturer designation carefully, as the 2N5785 part number is historically associated with Central Semiconductor Corp and may be obsolete or discontinued depending on the specific supplier source. Confirm availability status directly with authorized distributors before procurement planning. Ensure the requested unit matches the required pinout and package style to avoid integration errors during assembly.
Selection Notes
Select this component when a hermetically sealed NPN BJT is required for moderate power handling up to 1 W. The TO-39 package suits applications needing robust mechanical stability. Verify that the 50 V collector-emitter voltage and 1.2 A current limits align with the circuit's maximum operating conditions to ensure safe operation under all load scenarios.
Part Context
This component belongs to the family of silicon NPN power transistors utilizing the TO-39 metal can package. It serves as a discrete active element for controlling higher currents via base signals. The design emphasizes reliability in harsh environments due to the hermetic seal, distinguishing it from standard plastic-packaged equivalents in similar voltage classes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other manufacturers offering equivalent TO-39 NPN transistors only if official datasheets confirm identical electrical parameters and pin configurations.
