2N5794

$31.14

Description：TRANS 2NPN 40V 600MA TO-78-6
Series：-

SKU:4ac82295069e Category: Bipolar Transistor Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 40V 600MA TO-78-6
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：600mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
Power - Max：600mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-78-6 Metal Can
Supplier Device Package：TO-78-6
Grade：-
Qualification：-

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2N5794

Overview

The Microchip Technology 2N5794 is a dual small-signal NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 75 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of 600 mA and dissipates up to 600 mW of power. It operates within a temperature range of -65°C to +200°C. The DC current gain reaches a maximum of 300 at 150 mA and 10 V, while the collector-emitter saturation voltage is specified at 900 mV.

Feature Summary

Dual configuration integrating two NPN transistors in a single package
Extended thermal capability supporting operation up to +200°C
Silicon construction optimized for small-signal switching and amplification

Applications

High-temperature signal processing circuits
Small-signal amplification stages
Switching applications requiring dual NPN topology

Procurement Notes

Verify the specific suffix (e.g., /TR) for tape-and-reel packaging requirements against the official datasheet. Confirm radiation hardness levels if applicable, as JANS variants exist. Ensure the procurement documentation matches the exact part number to avoid confusion with through-hole equivalents or non-aerospace grades.

Selection Notes

Select this component when a dual NPN BJT is required for high-temperature environments exceeding standard commercial limits. Evaluate the 600 mA current capacity and 600 mW power dissipation against circuit demands. Consider the SMD/SMT mounting style for board space constraints. Verify that the 40 V VCEO rating meets the system's voltage headroom requirements.

Part Context

The 2N5794 belongs to the family of dual small-signal BJTs manufactured by Microchip Technology. It serves as a surface-mount alternative to traditional through-hole dual transistor packages. The device is part of Microchip's broader portfolio of discrete semiconductors, catering to applications needing compact, high-performance silicon switching solutions.