ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN DUAL 40V 600MA U
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：U
- Grade：-
- Qualification：-
Download product information
Overview
The Microchip Technology 2N5794AU/TR is a dual small-signal bipolar junction transistor (BJT) array designed for surface-mount applications. It features two NPN transistors housed in a compact 6-SMD, No Lead package. The device supports a maximum collector-emitter voltage of 40V and a continuous collector current of 600mA per transistor. With a power dissipation rating of 600mW, it is suitable for low-power switching and amplification tasks requiring high reliability in space-constrained designs.
Feature Summary
- Dual NPN configuration within a single surface-mount package
- Compact 6-SMD, No Lead footprint for automated assembly
- Rated for 40V collector-emitter voltage and 600mA collector current
Applications
- Low-power signal amplification circuits
- General-purpose switching applications
- Space-constrained electronic modules
Procurement Notes
Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status with the manufacturer, as some variants may differ. Ensure the 6-SMD, No Lead package dimensions match the target PCB layout constraints before finalizing procurement to avoid assembly issues.
Selection Notes
Select this component when a dual NPN BJT array is required in a surface-mount form factor. Consider the 40V voltage and 600mA current limits against circuit demands. Evaluate the 600mW power dissipation capability relative to thermal management requirements in the final enclosure design.
Part Context
This part belongs to Microchip's Bipolar Transistor Arrays category, specifically under Dual Small-Signal BJTs. It serves as a surface-mount alternative to through-hole discrete dual transistors, offering integration benefits for modern PCB layouts while maintaining standard bipolar transistor electrical characteristics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching pinout, voltage ratings, and package dimensions if considering alternatives.
