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The JANS2N5794U/TR is a dual small-signal NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 75 V, with an emitter-base voltage rating of 6 V. The device supports a continuous collector current of 600 mA and dissipates up to 600 mW of power. It operates within a temperature range of -65°C to +200°C. The component utilizes silicon technology and is supplied in a surface-mount package.
Verify the JANS prefix indicates military-grade qualification when sourcing this component. Confirm the specific tape-and-reel packaging designation matches system requirements. Ensure compliance with relevant defense standards during acquisition. Validate manufacturer documentation against project specifications before procurement.
Select this component for applications demanding high-temperature stability and radiation hardness. Verify that the 600 mA current rating meets load requirements. Ensure the surface-mount package fits the PCB layout constraints. Check compatibility with operating voltages not exceeding 40 V between collector and emitter.
This part belongs to the 2N5794 series of dual small-signal transistors. The JANS variant denotes a specific military or space-grade version produced by Microchip. It serves as a specialized alternative to standard commercial dual BJTs in harsh environments.
Check for direct equivalents with identical pinouts and electrical ratings. Verify radiation tolerance levels match if used in space applications. Ensure thermal characteristics are compatible with existing heat dissipation designs.