2N5796AU

2N5796AU

$52.37
  • Description:TRANS 2PNP DUAL 60V 600MA U
  • Series:-

SKU:8b8815437e62 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 600MA U
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:U
  • Grade:-
  • Qualification:-

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2N5796AU

Overview

The Microchip Technology 2N5796AU is a dual small-signal bipolar junction transistor (BJT) array configured with two PNP transistors. It operates in a surface-mount U package, specifically LCC-6. The device supports a maximum collector-emitter voltage of 60V and a collector-base voltage of 60V, with an emitter-base voltage rating of 5V. Maximum collector current is 600mA, while power dissipation is rated at 600mW. The saturation voltage is specified at 1.6V. Operating temperature ranges from -65°C to +175°C.

Feature Summary

  • Dual PNP configuration within a single compact surface-mount package
  • Radiation tolerant design suitable for harsh environments
  • Extended high-temperature operation capability up to 175°C

Applications

  • Military aerospace electronic systems
  • Satellite communication circuits
  • High-reliability signal processing arrays

Procurement Notes

Verify the specific ordering suffix to confirm radiation tolerance level and package variant. Ensure compatibility with MIL-PRF-19500/496 standards if mission-critical reliability is required. Confirm RoHS status and lead-free compliance for assembly processes. Validate that the supplier provides traceable documentation for defense applications.

Selection Notes

Select this component when a dual PNP BJT array is required for space-constrained designs. Consider the 600mW power dissipation limit for thermal management. Evaluate the 60V breakdown voltage against circuit requirements. Compare against through-hole TO-78 variants if surface mounting is not feasible.

Part Context

This part belongs to the 2N5796 series of dual small-signal BJTs manufactured by Microchip. It is available in various configurations including JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/496. The AU designation typically indicates a specific surface-mount package variant distinct from the through-hole TO-78 versions.

Replacement Considerations

Direct substitutes include other 2N5796AU variants from authorized distributors. Cross-reference with Central Semiconductor Corp equivalents if sourcing flexibility is needed. Verify pinout compatibility before replacing TO-78 packages with SMD versions.

2N5796AU2N5796AU
$52.37
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