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The Microchip Technology 2N5796AU is a dual small-signal bipolar junction transistor (BJT) array configured with two PNP transistors. It operates in a surface-mount U package, specifically LCC-6. The device supports a maximum collector-emitter voltage of 60V and a collector-base voltage of 60V, with an emitter-base voltage rating of 5V. Maximum collector current is 600mA, while power dissipation is rated at 600mW. The saturation voltage is specified at 1.6V. Operating temperature ranges from -65°C to +175°C.
Verify the specific ordering suffix to confirm radiation tolerance level and package variant. Ensure compatibility with MIL-PRF-19500/496 standards if mission-critical reliability is required. Confirm RoHS status and lead-free compliance for assembly processes. Validate that the supplier provides traceable documentation for defense applications.
Select this component when a dual PNP BJT array is required for space-constrained designs. Consider the 600mW power dissipation limit for thermal management. Evaluate the 60V breakdown voltage against circuit requirements. Compare against through-hole TO-78 variants if surface mounting is not feasible.
This part belongs to the 2N5796 series of dual small-signal BJTs manufactured by Microchip. It is available in various configurations including JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/496. The AU designation typically indicates a specific surface-mount package variant distinct from the through-hole TO-78 versions.
Direct substitutes include other 2N5796AU variants from authorized distributors. Cross-reference with Central Semiconductor Corp equivalents if sourcing flexibility is needed. Verify pinout compatibility before replacing TO-78 packages with SMD versions.