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Product Detailed Parameters
- Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：750 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 2mA, 2V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5815 TIN/LEAD is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting. It features a collector-emitter breakdown voltage of 40 V and a maximum collector current of 750 mA. The device operates with a transition frequency of 100 MHz and has a maximum power dissipation rating of 625 mW. Packaged in a TO-92-3 (TO-226AA) case, it exhibits a DC current gain of at least 100 at 2 mA and 2 V. The saturation voltage is specified as 750 mV at 50 mA base and 500 mA collector currents.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification applications
- Through-hole TO-92-3 package design for standard PCB integration
- Defined transition frequency supporting high-speed signal processing requirements
Applications
- General-purpose small-signal amplification circuits
- Low-power switching applications
- Audio signal processing stages
Procurement Notes
Verify the specific ordering suffix to confirm lead composition. The TIN/LEAD designation indicates compliance with legacy material specifications rather than RoHS standards. Ensure procurement matches the exact environmental requirement of the target assembly. Cross-reference the manufacturer part number against distributor listings to confirm availability status prior to order placement.
Selection Notes
Select this component when a PNP transistor with a 40 V collector-emitter rating is required. The 750 mA current capacity supports moderate load driving tasks. Consider the TO-92-3 package constraints for thermal management. Verify that the 100 MHz transition frequency aligns with the operational bandwidth needs of the circuit design.
Part Context
This component belongs to the Central Semiconductor 2N58xx series of small-signal transistors. These devices are engineered for reliable performance in consumer electronics and industrial control systems. The 2N5815 variant specifically targets applications requiring robust PNP switching capabilities within a compact form factor.
Replacement Considerations
Equivalent parts include the 2N5823 APM PBFREE and 2N5823 PBFREE from Central Semiconductor Corp. These substitutes offer parameter equivalence but differ in environmental compliance and packaging options.
