2N5817 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5817 is a silicon Schottky barrier rectifier diode designed for low voltage, high frequency applications. It features a maximum average forward rectified current of 1 A and a peak repetitive reverse voltage of 20 V. The device utilizes a DO-41 axial leaded package with a plastic encapsulation rated UL 94V-0 flammability. Key electrical characteristics include a maximum DC reverse leakage current of 1 mA at 20 V and a typical forward voltage drop of 450 mV at 1 A. The junction temperature range extends from -65°C to +175°C, supporting robust operation in demanding thermal environments.

Feature Summary

• Schottky barrier construction provides low forward voltage drop and high switching efficiency.
• Guard ring die design offers protection against transient voltage variations.
• Axial DO-41 package enables through-hole mounting for standard circuit board integration.

Applications

• Free wheeling rectification in power supply circuits
• Polarity protection for sensitive electronic loads
• Low voltage high frequency inverters

Procurement Notes

Verify the specific manufacturer datasheet for the 2N5817 TIN/LEAD variant to confirm compliance with RoHS directives, as tin/lead terminations typically indicate non-compliance. Ensure the ordering suffix matches the required termination material for your assembly process. Cross-reference the part number with authorized distributors to confirm availability and authenticity, as generic 1N5817 equivalents may have different reliability ratings or packaging specifications.

Selection Notes

Select this component when a low forward voltage drop is critical for system efficiency at 1 A continuous current. The 20 V rating suits low voltage DC-DC conversion stages. Verify that the DO-41 package size fits the PCB footprint constraints. Consider the 175°C junction temperature limit for high ambient temperature applications compared to standard plastic diodes limited to 150°C.

Part Context

This part belongs to the 1N58xx series of Schottky rectifiers, widely used in consumer electronics and industrial power supplies. Unlike standard PN junction diodes, the Schottky technology minimizes reverse recovery time, reducing switching losses. The 2N prefix often denotes military or high-reliability variants, though specifications generally align with commercial 1N5817 parts. Central Semiconductor focuses on specialized discrete semiconductors for rugged environments.

Replacement Considerations

Direct substitutes include the 1N5817 from manufacturers such as ON Semiconductor, Vishay, or Microchip. Ensure replacement parts maintain the 1 A current rating and 20 V reverse voltage. Verify package compatibility (DO-41) and terminal plating requirements if lead-free soldering is mandated.