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Product Detailed Parameters
- Description：40V 750MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：750 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
- Power - Max：625 mW
- Frequency - Transition：120MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5817 TRE PBFREE is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting. It features a collector-emitter voltage rating of 40 V and a continuous collector current capacity of 750 mA. The device operates with a transition frequency of 120 MHz and dissipates up to 625 mW of power. Packaged in a TO-92-3 configuration, this component serves as a general-purpose small-signal amplifier or switch within electronic circuits.
Feature Summary
- High-speed switching capability with a 120 MHz transition frequency
- Robust current handling for small-signal applications at 750 mA
- Standardized through-hole TO-92-3 package for reliable board integration
Applications
- General-purpose signal amplification
- Electronic switching circuits
- Audio frequency processing stages
Procurement Notes
Verify the specific suffix 'TRE' against official datasheets to confirm reel packaging requirements. Ensure the TO-92-3 footprint matches the target PCB design. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and current production status before finalizing procurement orders.
Selection Notes
Select this component when a standard NPN transistor with moderate voltage ratings and high-speed switching characteristics is required. The 40 V rating suits low-voltage logic and signal levels. Consider thermal management for the 625 mW dissipation limit in enclosed designs compared to higher-power alternatives.
Part Context
This part belongs to the Central Semiconductor BJT family, specifically tailored for through-hole assembly. It complements other small-signal transistors by offering a balance between voltage blocking capability and current drive strength. The TO-92-3 form factor ensures compatibility with legacy and modern automated insertion processes.
Replacement Considerations
Consult official cross-reference guides for direct substitutes. Verify pinout compatibility and electrical parameter margins to ensure circuit functionality remains intact during replacement.
