2N5818 APM PBFREE

$0.33

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:0e09e4c71d99 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：750mA
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 100mA, 1V
Power - Max：625 mW
Frequency - Transition：135MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5818 APM PBFREE

Overview

The 2N5818 APM PBFREE is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and features a TO-92-3 through-hole package. Key electrical specifications include a collector-emitter voltage (Vceo) of 40 V, a collector-base voltage (Vcbo) of 40 V, and an emitter-base voltage (Vebo) of 7.5 V. The device supports a maximum continuous collector current of 750 mA and dissipates up to 625 mW of power. It exhibits a transition frequency (fT) of 135 MHz.

Feature Summary

Single NPN bipolar junction transistor configuration
Through-hole mounting in TO-92-3 package
Silicon semiconductor technology

Applications

General purpose switching applications
Small signal amplification circuits
Audio frequency amplifier stages

Procurement Notes

Verify the specific suffix 'APM' against the manufacturer's official datasheet to confirm tin/lead composition requirements. Ensure the TO-92-3 package dimensions match the target PCB footprint. Confirm RoHS compliance status for the specific batch, as 'PBFREE' indicates lead-free but packaging variations may exist.

Selection Notes

Select this component when a small-signal NPN transistor with moderate current handling capability is required. The 135 MHz transition frequency suits audio and low-frequency RF applications. Compare the 625 mW power dissipation limit against thermal constraints in the final assembly design.

Part Context

This part belongs to the general-purpose BJT category from Central Semiconductor. It serves as a discrete active element for circuit control and signal processing. The TO-92-3 form factor allows for easy integration into prototyping boards and consumer electronics assemblies requiring standard through-hole components.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic 2N5818 equivalents only if electrical parameters align exactly with the original specification sheet.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.