2N5818 TIN/LEAD

$0.35

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:b20418f65a80 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：40V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：750mA
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 100mA, 1V
Power - Max：625 mW
Frequency - Transition：135MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5818 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5818 TIN/LEAD is a complementary silicon audio frequency medium power transistor. It is an NPN device housed in a cylindrical TO-92 package with three terminals. Key electrical parameters include a maximum collector current of 0.75 A, a collector-emitter voltage of 40 V, and a maximum power dissipation of 0.5 W. The component features a minimum DC current gain (hFE) of 150 and operates within a temperature range up to 135 °C.

Feature Summary

Designed for audio frequency applications as part of a complementary silicon transistor series.
Medium power capability suitable for general-purpose amplification tasks.
Utilizes a through-hole cylindrical package for robust mechanical mounting.

Applications

Audio amplifier circuits
General-purpose switching applications
Complementary push-pull output stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin/lead composition requirements. Confirm RoHS compliance status directly with the supplier, as historical data indicates varying certification levels for this component family. Ensure the cylindrical TO-92 package dimensions match your PCB footprint constraints before finalizing procurement orders.

Selection Notes

Select this component when a medium-power NPN transistor with high current gain is required for audio or low-frequency applications. Compare its 0.75 A collector current and 40 V rating against circuit demands. Consider the complementary PNP counterpart for balanced push-pull configurations. Verify thermal management needs given the 0.5 W power dissipation limit in the specified package.

Part Context

This component belongs to the broader category of discrete bipolar junction transistors manufactured by Central Semiconductor. It serves as a standard NPN option within their complementary silicon AF medium power transistor lineup. The device is distinct from higher-power TO-220 variants and lower-current small-signal transistors, targeting specific medium-power audio and switching niches.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference guides for verified equivalents.