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The Central Semiconductor Corp 2N5822 PBFREE is a single NPN bipolar junction transistor designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter voltage of 70 V and a continuous collector current rating of 750 mA. The device supports a power dissipation of 625 mW with a transition frequency of 120 MHz. DC current gain is specified at a minimum of 100 under standard test conditions, while saturation voltage remains low at 1.2 V max. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status. Ensure package compatibility matches TO-92-3 requirements. Confirm that voltage and current ratings align with circuit design limits before procurement.
Select this component for applications requiring complementary pairing with the 2N5823 PNP variant. Verify that the 70 V breakdown voltage meets system peak requirements. Consider the 625 mW power limit for thermal management strategies in enclosed environments.
This part belongs to the Central Semiconductor 2N5822/5823 series of complementary silicon transistors. These devices are engineered as matched pairs for audio and general-purpose medium power applications. The series provides reliable performance in through-hole configurations.
Public confirmed substitutes include the 2N5823 APM PBFREE and 2N5823 TIN/LEAD from Central Semiconductor Corp.