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Product Detailed Parameters
- Description：60V 750MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：750 mA
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：120MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N5822 TRE PBFREE is a silicon Schottky barrier rectifier manufactured by Central Semiconductor Corp. It features a single-phase, one-element configuration housed in the DO-201AD plastic package. The device supports a maximum repetitive reverse voltage of 40V and an average forward rectified current of 3A. Key electrical characteristics include a low forward voltage drop of 0.95V maximum at rated current and a low reverse leakage current of 5mA maximum at 40V. It operates within a junction temperature range of -65°C to +175°C and complies with RoHS standards.
Feature Summary
- Schottky barrier construction for high switching efficiency
- Low forward voltage drop to minimize power loss
- High surge current capability for robust operation
- Plastic molded case with UL flammability classification 94V-0
Applications
- General purpose rectification in power supplies
- Free-wheeling diodes in inductive load circuits
- Polarity protection in DC input lines
- Clamping diodes in logic circuits
Procurement Notes
Verify the specific suffix 'TRE' against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free plating specifications. Ensure the ordering part number matches the exact electrical ratings required for the target application circuit design.
Selection Notes
Select this component when a through-hole Schottky rectifier with 3A continuous current handling is required. Compare the 40V reverse voltage rating against peak inverse voltage spikes in the circuit. Consider the thermal management requirements given the 0.95V forward voltage drop at full load current.
Part Context
This part belongs to the 1N582x series of Schottky barrier rectifiers from Central Semiconductor. These devices are designed as replacements for standard silicon rectifiers where faster switching speeds and lower forward voltage drops are necessary. The series covers voltage ratings from 20V to 40V with a consistent 3A current capacity.
Replacement Considerations
Direct parameter-equivalent substitutes include the 1N5822 from other manufacturers such as Rectron or Vishay. Verify that alternative sources offer identical DO-201AD packaging and meet the same 3A/40V specifications.
