2N5822 TRE TIN/LEAD

$1.47

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:95956d321c69 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
Power - Max：1.5 W
Frequency - Transition：120MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5822 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5822 TRE TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 750 mA. The device supports a transition frequency of 120 MHz and dissipates up to 1.5 W of power. Operating temperatures range from -65°C to 150°C, with a DC current gain minimum of 100 at 2 mA and 2 V.

Feature Summary

PNP polarity configuration for switching and amplification
High-frequency operation capability
Through-hole TO-92-3 packaging

Applications

General-purpose amplifier circuits
Small-signal switching applications
Audio signal processing stages

Procurement Notes

Verify the specific ordering suffix required for tin/lead plating availability directly with the manufacturer or authorized distributors. Confirm RoHS compliance status as leaded variants may differ from standard environmental regulations. Check for active production status or end-of-life notifications before finalizing procurement plans.

Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 750 mA current capacity is required. Ensure the TO-92-3 form factor fits the board layout constraints. Verify that the 1.5 W power dissipation rating meets the thermal requirements of the intended application environment.

Part Context

This part belongs to the Central Semiconductor 2N5822/5823 series, which pairs NPN and PNP transistors. The 2N5822 serves as the complementary PNP counterpart to the 2N5823 NPN device. Both share similar electrical characteristics and are commonly used in push-pull output stages or differential amplifier configurations.