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The Central Semiconductor Corp 2N5823 APM PBFREE is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It supports a maximum collector current of 750 mA and a collector-emitter breakdown voltage of 60 V. The device features a transition frequency of 120 MHz and a maximum power dissipation of 1.5 W. DC current gain is specified at a minimum of 100 under standard test conditions, with a collector cutoff current limited to 100 nA.
Verify the specific APM suffix against official datasheets to confirm lead-free compliance and package marking variations. Ensure the procurement channel provides valid RoHS3 certification documentation. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and traceability before finalizing orders.
Select this component when a PNP transistor with 60 V rating and 750 mA continuous current capacity is required. The TO-92-3 package suits prototyping and low-volume production where through-hole assembly is preferred. Verify that the 120 MHz transition frequency meets the signal speed requirements of the target application circuit design.
This component belongs to the 2N582x series of small-signal transistors manufactured by Central Semiconductor Corp. The series includes complementary NPN variants such as the 2N5822. These devices are engineered for general-purpose electronic applications requiring robust switching capabilities within standard through-hole form factors.
Official parameter-equivalent substitutes include the 2N5823 TIN/LEAD and 2N5823 PBFREE from Central Semiconductor Corp. Verify pinout compatibility and thermal characteristics when substituting.