2N5823 PBFREE

$1.28

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:e558416e640d Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
Power - Max：1.5 W
Frequency - Transition：120MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5823 PBFREE

Overview

The Central Semiconductor Corp 2N5823 PBFREE is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 750 mA. The device supports a transition frequency of 120 MHz and dissipates up to 1.5 W of power. Key electrical characteristics include a minimum DC current gain of 100 at 2 mA and 2 V, with a maximum collector cutoff current of 100 nA. It operates within a junction temperature range of -65°C to 150°C.

Feature Summary

PNP polarity configuration for complementary circuit applications
High-frequency performance suitable for signal amplification
Robust thermal dissipation capability for power handling
Lead-free compliant construction for environmental standards

Applications

General-purpose switching circuits
Small-signal amplification stages
Complementary pairs in audio or RF designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to ensure lead-free compliance and package consistency. Confirm RoHS3 status directly with the supplier. Check for any recent product change notifications that may affect pinout or material composition before finalizing procurement specifications.

Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 750 mA current capacity is required in a TO-92-3 form factor. Ensure the application demands a transition frequency compatible with 120 MHz operation. Verify that the thermal management design accommodates the 1.5 W power dissipation limit under expected operating conditions.

Part Context

This part belongs to the standard discrete semiconductor transistor family manufactured by Central Semiconductor Corp. It serves as a lead-free variant of the traditional 2N5823 specification. The component is categorized under single bipolar junction transistors intended for general electronic applications requiring reliable through-hole integration.