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The Central Semiconductor Corp 2N5823 TRE PBFREE is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 750 mA. The device supports a transition frequency of 120 MHz and dissipates up to 1.5 W of power. Key electrical characteristics include a DC current gain of at least 100 at 2 mA and 2 V, with a maximum saturation voltage of 750 mV at 500 mA. Operating temperatures range from -65°C to 150°C.
Verify the specific suffix 'TRE' against official datasheets to confirm reel packaging requirements, as standard listings may default to bulk or tape configurations. Ensure RoHS3 compliance matches project specifications. Confirm lead times directly with the manufacturer due to potential variations in production cycles for specific package variants.
Select this component when a PNP transistor with moderate voltage ratings and high current capacity is required for through-hole assembly. The TO-92-3 package offers compact sizing for standard PCB layouts. Consider the 120 MHz transition frequency for applications requiring faster switching speeds compared to lower-frequency alternatives.
This part belongs to the 2N582x series of small-signal transistors manufactured by Central Semiconductor Corp. The series typically includes complementary NPN and PNP devices designed for similar performance envelopes. These components are widely used in consumer electronics and industrial control systems where reliable low-power switching is essential.
Public confirmed substitute part numbers: 2N5823 APM PBFREE, 2N5823 PBFREE.